Stress at the coalesced boundary of GaN grown on maskless periodically grooved sapphire
writer：Yu, Naisen; Mao, Zhangwen; Hu, Danyang; et al.
keywords：GaN grown
source：期刊
specific source：Optoelectronics and Advanced Materials-Rapid Communications Volume: 6 Issue: 11-12 Pages: 1034-1036
Issue time：2012年
Source: Optoelectronics and Advanced Materials-Rapid Communications Volume: 6 Issue: 11-12 Pages: 1034-1036 Published: 2012