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¼‹…è´Ÿæžç”±äºŽå…¶‘…高的ç†è®ºå®¹é‡ã€è¾ƒä½Žçš„ç”?sh¨´)化å¦å应ç”?sh¨´)ä½å’Œä¸°å¯Œçš„自然资æºè€Œè¢«òq¿æ³›è®¤äØ“(f¨´)是下一代高能é‡å¯†åº¦é”‚离å电(sh¨´)æ± æžå…·åº”用å‰æ™¯çš„è´Ÿæžæ料之一。然而，¼‹…颗¾_’在åå¤åœ°åµŒé”?脱锂˜q‡ç¨‹ä¸ä¼š(x¨¬)å‘生巨大的体¿U¯å˜åŒ–，å¯ÆD‡´‹zÀL€§ç¡…é¢—ç²’å‡ºçŽ°å¼€è£‚ç”šè‡³ç²‰åŒ–ï¼Œé€ æˆç”?sh¨´)解液的ä¸æ–消耗和SEI膜的åå¤ç”Ÿé•¿åQŒä‹É得电(sh¨´)æžè¡¨çŽ°å‡ºè¾ƒå·®çš„åó@çŽ¯å¯¿å‘½ã€‚ç ”½I¶è¡¨æ˜Žï¼Œé€šè¿‡å¯¹ç¡…ææ–™˜q›è¡Œ¾U³ç±³åŒ–ã€åˆé‡‘化ã€å¤šå”化处ç†ä»¥åŠä¸Žç¢³åŸºæ料的å¤åˆ½{‰ç–ç•¥å¯ä»¥æœ‰æ•ˆåœ°è§£å†³ä¸Šè¿°é—®é¢˜åQŒä½†æ˜¯å¤æ‚的工艺和过高的æˆæœ¬åQŒä¾ç„‰™™åˆ¶äº†å…¶å®žé™…应用ã€?
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æ—¥å‰åQŒåŽ¦é—¨å¤§å¦çŽ‹é¸£ç”Ÿæ•™æŽˆå›¢é˜Ÿç›´æŽ¥ä»Žç²˜¾l“剂改进的ç–略出å‘，通过使用æ¤é…¸(PA)作äØ“(f¨´)交è”剂，¾l“åˆä¼ 统çš?/span>CMC¾_˜ç»“剂，æž?/span>å»ÞZº†å¼ºå¥çš?/span>CMC/PA交蔾_˜ç»“剂网¾l?/span>用于¾U¯ç¡…甉|žåQŒå¦‚å›?/span>1a, b所½Cºã€‚在è¯?/span>设计ä¸ï¼ŒCMC是一¿U常规的水溶性粘¾l“剂åQŒå«æœ‰å¤§é‡çš„¾Ÿ§åŸºä½ç‚¹å’Œç¾ŸåŸºå®˜èƒ½å›¢ã€?/span>PA通常æ¥æºäºŽæ¤ç‰©ç§å，ç”׃ºŽå«æœ‰ä¸°å¯Œçš„羟基官能团åQŒå¯ä¸?/span>CMC¾_˜ç»“å‰?/span>的羧åŸÞZ½ç‚¹å’Œ¾ŸŸåŸºå®˜èƒ½å›¢åÅžæˆé…¯é”®å’Œæ°¢é”®åQŒåˆèƒ½å¤Ÿå’?/span>Si颗粒表颾ŸŸåŸºå½¢æˆæ°¢é”®ã€‚而且åQŒä¸åŒäºŽ¾U¿æ€?/span>CMC¾_˜ç»“剂，˜q™ç§æžæŽ¥çš?/span>CMC/PA¾_˜ç»“剂由于和¼‹…颗¾_’有更多的接触ä½ç‚¹ï¼Œå¯ä»¥å½¢æˆæ›´å¼ºçš„氢键。原ä½ç”µ(sh¨´)é•œåŠéžåŽŸä½è°±å¦ç‰è¡¨å¾æ‰‹æ®µå……分æ示了：(x¨¬)与啾U¯çš„CMC¾_˜ç»“å‰?/span>相比åQ?/span>CMC/PA交蔾_˜ç»“剂网¾lœå…·æœ‰æ›´å¼ºçš„¾_˜é™„性能和更高的力å¦å¼ºåº¦ã€‚å› æ¤ï¼Œä½¿ç”¨˜q™ç§æ”ÒŽ(gu¨©)€§çš„CMC/PA¾_˜ç»“剂的¼‹…电(sh¨´)æžï¼Œåœ¨åå¤ç”µ(sh¨´)化å¦å¾ªçŽ¯˜q‡ç¨‹ä¸å¯ä»¥æœ‰æ•ˆåœ°é€‚应‹zÀL€§ç¡…的体¿U¯å˜åŒ?/span>åQŒä¿æŒäº†ç”‰|žæ•´ä½“的完整性和SEI膜的½E›_®šæ€§ï¼Œæœ€¾lˆè¡¨çŽ°å‡ºè¾ƒä¼˜å¼‚çš„ç”?sh¨´)化å¦æ€§èƒ½ã€?/span>
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å›?/span>1. (a) CMCä¸?/span>PA¾~©åˆå½¢æˆäº¤è”CMC/PA¾_˜ç»“å‰?/span>çš?/span>½Cºæ„图ã€?/span>(b) Si颗粒ä¸?/span>CMC/PA¾_˜ç»“剂之间的化å¦é”®åˆã€?/span>(c) Si-CMCå’?/span>Si-CMC/PA甉|žåœ¨åó@环过½E‹ä¸çš?/span>形貌演嘽Cºæ„图ã€?/span>
å›?/span>2. (a, b) Si-CMC/PAå¤åˆç‰?/span>çš?/span>TEM囑֒Œ(c) HRTEMå›?/span>åQŒä»¥å?/span>对应çš?/span>å…ƒç´ mappingå›?/span>(d-h)ã€?/span>Si-CMC/PAå’?/span>Si-CMC甉|žçš„高分èöLXPS谱图åQ?/span>(i) Si 2på’?/span>(j) C 1såQ?/span>(k) Si-CMC/PAçš?/span>P 2p的高分èöLXPSè°?/span>å›?/span>ã€?/span>(l)¾U?/span>Siã€?/span>Si-CMCã€?/span>Si-CMC/PAå¤åˆç‰?/span>çš?/span>FT-IR谱图ã€?/span>
å›?/span>3. Si-CMCå’?/span>Si-CMC/PAçš„æµå˜æ€§èƒ½(a)和剥¼›»è¯•éªŒç»“æž?/span>(b)ã€?/span> CMCå’?/span>CMC/PA¾_˜ç»“剂薄膜的应å˜-应力曲线(c)åQ?/span>æ¨æ°æ¨¡é‡(d)å’Œæ–裂应åŠ?/span>(e)ã€?/span>
å›?/span>4. ç”?sh¨´)化å¦æ€§èƒ½åQ?/span>Si-CMC/PA甉|žçš?/span>CV曲线(a)和充æ”?/span>甉|›²¾U?/span>(b)ã€?/span>Si-CMC/PAå’?/span>Si-CMCåœ?/span>0.5 A g?1下的循环性能(c)åQŒå€çŽ‡æ€§èƒ½åQ?/span>dåQ‰ä»¥å?/span>åœ?/span>4 A g?1ä¸?/span>çš?/span>é•?/span>å‘?/span>期åó@环性能åQ?/span>eåQ‰ï¼Œå…¨ç”µ(sh¨´)æ± åœ¨1 C下的循环性能(f)å’?/span>å€çŽ‡æ€§èƒ½(g)ã€?/span>
å›?/span>5. Si-CMC/PA甉|žåˆå§‹æ€?/span>TEMå›?/span>(a)å’?/span>首次锂化ä¸åŒæ—¶åˆ»TEMå›?/span>(b-d)ã€?/span>首次锂化˜q‡ç¨‹ä¸æ‰€æ ‡è®°åŒºçš„¼‹…纳¾c³é¢—¾_’团èšä½“çš„é•¿çŸèáu长度å˜åŒ–ç›´æ–¹å›?/span>(e)ã€?/span>Si-CMC/PA甉|žçš„选区ç”?sh¨´)åè¡å°„图ï¼?x¨¬)(f)åˆå§‹æ€?/span>åQ?/span>(g)首次锂化åŽå’Œ(h)首次脱锂å?/span>。å¦ä¸€ä¸?/span>Si-CMC/PA甉|žä¸‰ä¸ªåŽŸä½ç”?sh¨´)化å¦åó@环的TEMå›?/span>(i-p)ã€?/span>
å›?/span>6. Si-CMC/PA甉|žåœ?/span>4 A g?1下åó@çŽ?/span>200‹Æ¡åŽçš„åÅžè²?/span>:(a,b) TEM图，(c,d) HRTEM图，(e) SAED图，(f-l) HAADF图以å?/span>对应的元ç´?/span>mappingå›?/span>ã€?/span>
å›?/span>7. SEI化å¦æˆåˆ†åQ?/span>Si-CMC/PA甉|žä¸åŒå¾ªçŽ¯‹Æ¡æ•°åŽçš„高分辨率XPS谱图(a) C 1så’?/span>(b) F 1såQ?/span>Si-CMC甉|žä¸åŒå¾ªçŽ¯‹Æ¡æ•°åŽçš„高分辨率XPS谱图(c) C 1så’?/span>(d) F 1sã€?/span>
该æˆæžœè¿‘日以é¢?/span>â€?/span>Constructing Robust Cross-Linked Binder Networks for Silicon Anodes with Improved Lithium Storage Performanceâ€?span style="font-family:宋体;">å‘表åœ?/span>ACS Applied Materials & Interfacesä¸?/span>åQ?span style="font-family:;">DOI: 10.1021/acsami.1c14907åQ‰ã€‚厦门大å¦ææ–™å¦é™¢åšå£«ç”Ÿéƒ‘志明äØ“(f¨´)该论文的½W¬ä¸€ä½œè€…，王鸣生教授äØ“(f¨´)本文通讯作者（详è§è¯ùN¢˜¾|‘ç«™http://mswang.xmu.edu.cnåQ‰ã€?/span>
原文链接
https://doi.org/10.1021/acsami.1c14907
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