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忆阻å™?/span>是一¿U具有éžæ˜“失性电(sh¨´)é˜Õd¼€å…Œ™¡Œä¸ºçš„åŒç«¯å™¨äšg。近òq´æ¥åQŒç”±äºŽåœ¨é«˜å¯†åº¦å­˜å‚¨æŠ€æœ¯å’Œ¼œžç»å½¢æ€è®¡½Ž—æ–¹é¢çš„巨大å‘展潜力åQŒå¿†é˜Õd™¨çš„ç ”½I?/span>æˆäØ“(f¨´)基础¿U‘学和技术应用的é‡è¦¾l„æˆéƒ¨åˆ†ã€‚得益于独特的二¾l´å±‚状结构和å‡ø™‰²ç”?sh¨´)å­?/span>性能åQ?/span>二维æ料已被è¯æ˜Žæ˜¯ç”¨äºŽé—¨å¯è°ƒã€é«˜å¯é ã€å¼‚质结兼容和低功è€?/span>的忆é˜?/span>器äšg的良好候选æ料。更½E›_®šã€å¯é çš„é?/span>易失性电(sh¨´)é˜Õd¼€å…»I¼ˆRSåQ?/span>è¡ŒäØ“(f¨´)å¯ä»¥åœ¨å¤šå±‚甚臛_•å±‚二¾l?/span>层状æ料中实çŽ?/span>。å¦ä¸€æ–šw¢åQŒå› ä¸?/span>æ¼ç”µ(sh¨´)‹¹?/span>的存在，传统氧化ç‰?/span>薄膜æ料很难åœ?/span>几纳¾c?/span>厚度范围å†?/span>实现å¯é çš„阻å˜æ€§èƒ½ã€‚此外，˜q™ç§åŒç«¯å™¨äšg昄¡¤ºäº†ä¸€¾pÕdˆ—çš„çªè§¦åŠŸèƒ½ï¼Œèƒ½å¤Ÿåœ¨ç¥ž¾l网¾lœä¸­æ¨¡æ‹Ÿç”Ÿç‰©½H触ã€?/span>


鉴于此，四å·å¸ˆèŒƒå¤§å­¦æŽ¥æ–‡é™è¯¾é¢˜ç»„和香港ç†å·¥å¤§å­¦éƒå»ºåŽæ•™æŽˆè¯ùN¢˜¾l?/span>¾lÆD¿°äº?/span>˜q‘å¹´æ¥åŸºäº?/span>无机和有æœÞZºŒ¾l´æ料的忆阻器的研究˜q›å±•åQŒä»Žæ料的åˆæˆã€å™¨ä»¶ç»“构和制备ã€ç‰©ç?/span>机制åQŒåˆ°åŸÞZºŽä¸åŒäºŒç»´æ料的具有良å¥?/span>RS性能的多功能忆阻å™?/span>以åŠ(qi¨¢ng)åŸÞZºŽå¿†é˜»å™¨çš„½H触应用。最åŽï¼Œ˜q˜è®¨è®ÞZº†ä¿¡æ¯å­˜å‚¨å’Œç¥ž¾låÅžæ€è®¡½Ž—在当å‰é˜¶æ®µçš„å‘展å‰æ™¯å’ŒæŒ‘战åQ?/span>òq¶å¯¹æ­¤æå‡ÞZº†˜q›ä¸€æ­¥çš„è§è§£ã€?/span>

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å›?/span>2. 常è§å‡ ç§å¿†é˜»å™?/span>é˜Õd˜æœºåˆ¶åQšé‡‘属导ç”늻†ä¸æœºåˆ¶ã€ç©ºä½å¯¼ç”늻†ä¸æœºåˆ¶å’Œç”?sh¨´)å­çš„俘获与åŽÖM¿˜èŽ—÷€?/span>(a) PET衬底ä¸?/span>Ag/MoS2/Au忆阻器的原ç†å›¾ã€?/span>(b) Ag CFsçš„åÅžæˆå’Œ(c)断裂ã€?/span>(d)截é¢é€å°„ç”?sh¨´)镜囑փ昄¡¤ºå½¢æˆç?/span>导电(sh¨´)¾l†ä¸ã€?/span>(e)矛_¢¨çƒ?/span>/2D钙钛çŸ?/span>/金垂直结构的HAADF STEM囑փã€?/span>(f)元素Brçš?/span>EDX元素映射囑փã€?/span>(g)åŸÞZºŽPCBM/MoS2异质¾l“的忆阻器结构示æ„图。æ’图显½CÞZº†PCBM/MoS2 2D¾U³ç±³å¤åˆæ料的异质结¾l“æž„åQŒä»¥å?/span>PCBMå’?/span>MoS2的结构ã€?/span>(h) PCBM/MoS2异质¾l“原ç†å›¾ã€‚黄色和é’色区域分别代表ç”?sh¨´)å­çš„èšé›†å’Œè€—å°½ã€?/span>(i)ç”?sh¨´)è·ä¿˜èŽ·ç?/span>RS机制原ç†å›¾ã€?/span>


自二¾l´ææ–™å‘çŽîC»¥æ¥ï¼Œåˆ¶å¤‡æ–ÒŽ(gu¨©)³•å¤§è‡´åˆ†äØ“(f¨´)自上而下和自下而上两ç§ã€‚其中，微机械剥¼›Õd’ŒåŒ–学气相沉积åQ?/span>CVDåQ?/span>是最具代表性的æ–ÒŽ(gu¨©)³•ã€‚剥¼›ÀL³•åˆ¶å¤‡çš„二¾l´æ料具有æ“作简å•ã€æˆæœ¬ä½Žã€è´¨é‡å¥½ã€è¡¨é¢æ— æ‚(zh¨¨n)¬æÕQ¾_˜ç»“½{‰ä¼˜ç‚V€‚然而剥¼›?/span>æ³?/span>也有一定的é™åˆ¶åQŒå¦‚无法制备大尺寸的样å“åQŒé‡å¤çŽ‡ä½?/span>½{‰ç¼ºç‚?/span>。此外，该方法仅适用äº?/span>å·²ç»åˆ¶å¤‡è‰¯å¥½çš„å—状晶ä½?/span>åQ?/span>例如å•å±‚和少层的矛_¢¨çƒ¯çº³¾c³ç‰‡å¯ä»¥ä»Žé«˜åº¦å®šå‘的热解矛_¢¨åQ?/span>HOPGåQ?/span>中剥¼›…R€‚在CVD法中åQŒç”±ç›¸åº”的二¾l´æ料组æˆå…ƒç´ ç»„æˆçš„å‰é©±ä½“用于气相å应。目标分å­æ²‰¿U¯åœ¨é€‰å®šçš„底物上åQŒåƈé€æ¸è‡ªç»„装æˆå•å±‚或多层样å“ã€?/span>CVD法在制备二维æ料斚w¢å…ähœ‰ç‹¬ç‰¹çš„优åŠ?/span>åQ?/span>它å¯ä»¥å®žçŽîCºŒ¾l´æ料的多类型ã€å¤š¾l´æ€§çš„生长åQŒåƈ能有效控制二¾l´æ料的æˆæ ¸ä½ç½®ã€æ ·å“åŞ貌ã€æ ·å“厚度和样哞®ºå¯¸ã€?/span>CVD法制备的许多二维ææ–™åQŒå¦‚矛_¢¨çƒ¯ã€?/span>h-BNå’?/span>TMDCsåQŒåœ¨ç”?sh¨´)å­¦ã€å…‰å­¦å’ŒåŠ›å­¦æ€§èƒ½æ–šw¢ä¸Žæœºæ¢°å‰¥¼›ÀL³•åˆ¶å¤‡çš„ææ–™ä¸ç›æ€¸Šä¸‹ã€‚äØ“(f¨´)了æˆåŠŸåˆ¶å¤‡é«˜è´¨é‡çš„多元素二维ææ–™åQŒåŒ–学计é‡ã€åŽšåº¦ã€ç¼ºé™—÷€æ™¶¾_’尺寸和表颾_—糙度等关键因素必须得到很好的控制ã€?/span>å› æ­¤åQŒæœ¬æ–‡æ€È»“了近òq´æ¥åŸÞZºŽCVD生长和微机械剥离法制备的典型二维æ料的忆é˜Õd™¨å?qi¨¢ng)其相关½H触应用ã€?/span>

å›?/span>3. åŸÞZºŽCVD生长çš?/span>TMD垂直忆阻器的基本性能ã€?/span>(a)åŸÞZºŽå•å±‚TMD的垂直记忆电(sh¨´)é˜ÕdŽŸç†å›¾ã€?/span>(b)å•å±‚MoS2çš„åŒæž?/span>RS曲线ã€?/span>(c) 1%åº?/span>åŠ?/span>ä¸?/span>1000‹Æ¡å¼¯æ›²åó@环的HRSå’?/span>LRSç”?sh¨´)阻。æ’å›?/span>:柔性装¾|®åœ¨å¼¯æ›²æ—¶çš„照片ã€?/span>(d)制作h-BN垂直器äšg的光学图åƒã€?/span>(e)15 ns SET脉冲演示ã€?/span>(f) h-BN基忆é˜Õd™¨çš„ä¿æŒç‰¹æ€§ã€?/span>

å›?/span>4. åŸÞZºŽCVD法生长的MoS2òq³é¢å¿†é˜»å™¨åŸºæœ¬æ€§èƒ½å’Œç®€å•çš„½H触应用ã€?/span>(a)交å‰GB-MoS2忆阻器原ç†å›¾ã€?/span>(b)ç”?sh¨´)铸åŽç›¸ä?/span>GB忆阻器的å电(sh¨´)‹¹?/span>-ç”?sh¨´)åŽ?/span>(I-V)ç‰ÒŽ(gu¨©)€§æ›²¾UÑ€‚æ’å›?/span>:完整çš?/span>I-V特å¾æ›²çº¿ã€?/span>(c)交å‰GB和等åˆ?/span>GN忆阻器的门å¯è°?/span>I-Vç‰ÒŽ(gu¨©)€§ã€?/span>(d) MoS2基多æ™?/span>memtransistor原ç†å›¾ã€?/span>(e)½H触åŽç”µ(sh¨´)‹¹ä½œä¸ºå¹…度分别äØ“(f¨´)30å’?/span>30 V的脉冲电(sh¨´)压的函数åQŒè¡¨çŽ°å‡ºé•¿æœŸçš„增强和抑制ã€?/span>(f) 6ç«?/span>MoS2 memtransistor在ä¸åŒçŠ¶æ€ä¸‹çš?/span>I24-V24曲线。在ä»ÖM½•è„‰å†²åˆºæ¿€å‰æµ‹é‡é»‘色曲¾U?/span>;在端å­?/span>5 ~ 6之间施加4ä¸?/span>80 V脉冲得到¾l¿è‰²æ›²çº¿;在端5和端6之间施加3ä¸?/span>80 V脉冲åQŒå¾—到红色曲¾UÑ€‚左边的æ’图ä¸?/span>多终端设备的光学囑փ。å³è¾¹çš„æ’图昄¡¤ºäº†å¼‚½H触å¯å¡‘性。左è¾ÒŽ(gu¨©)’图中的白色虚¾U¿æ˜¾½CÞZº†MoS2çš„è¾¹¾~˜ã€?/span>


å›?/span>5. åŸÞZºŽCVD生长的用于äh工神¾l应用的2Dæ料的忆é˜Õd™¨ã€?/span>(a)ä¸åŒé€šé“长度çš?/span>MoS2 memtransistor器äšg阵列的光学图åƒã€?/span>(b)在ä¸åŒæºæžæ¼ç”?sh¨´)åŽ?/span>(Vds)扫æ范围下的器äšgçš?/span>I-V回èµ\。扫ž®„æ–¹å‘用黑色½Ž­å¤´è¡¨ç¤ºã€?/span>(c) MoS2微型晶体½Ž¡çš„é—¨å¯è°ƒè°RSè¡ŒäØ“(f¨´)ã€?/span>(d)½H触åŽç”µ(sh¨´)‹¹?/span>åQ?/span>PSCåQ?/span>分别作äØ“(f¨´)òq…度分别ä¸?/span>10å’?/span>10 V的脉冲电(sh¨´)压的函数åQŒè¡¨çŽ°å‡ºé•¿æœŸçš„增强和抑制ã€?/span>(e)½H触åŽç”µ(sh¨´)‹¹ä½œä¸ºå¹…度äØ“(f¨´)2 ~ 10 V的脉冲电(sh¨´)压的函数(f)所制备çš?/span>MoS2微型晶体½Ž¡çš„脉冲旉™—´ä¾èµ–性å¯å¡‘性ã€?/span>

å›?/span>6. åŸÞZºŽå¾®æœºæ¢°å‰¥¼›ÀL³•åˆ¶å¤‡çš„二¾l´çº³¾c³ç‰‡çš„åã^é¢åŒç«¯å¿†é˜Õd™¨çš„基本性能ã€?/span>(a) Ag为电(sh¨´)æžçš„二维GaSe基忆é˜Õd™¨åŽŸç†å›¾ã€?/span>(b) 50ä¸?/span>GaSeåŸø™®°å¿†ç”µ(sh¨´)é˜Èš„实验开兛_›žè·¯ã€?/span>(c) Ag/GaSe/Ag忆阻器的门å¯è°ƒè°RSè¡ŒäØ“(f¨´)ã€?/span>(d)以金为电(sh¨´)æžçš„二维GaSe基忆é˜Õd™¨åŽŸç†å›¾ã€?/span>(e)éžæ˜“失åŒæž?/span>RSç‰ÒŽ(gu¨©)€§æ›²¾U¿åœ¨ç›¸å¯¹è¾ƒé«˜çš„ä¾ä»Žæ€§ç”µ(sh¨´)‹¹äØ“(f¨´)1 mAã€?/span>(f) 10 μA较低™åºåº”甉|µä¸‹æŒ¥å‘性阈å€?/span>RSç‰ÒŽ(gu¨©)€§æ›²¾UÑ€?/span>(g)åŸÞZºŽäºŒç»´å±‚状K-birnessite MnO2¾U³ç±³ç‰‡çš„记忆ç”?sh¨´)阻原ç†å›¾ã€?/span>(h)在相对较高的1 mA™åºåº”甉|µä¸‹çš„éžæ˜“失åŒæž?/span>RSç‰ÒŽ(gu¨©)€§æ›²¾UÑ€?/span>(i) 100 μA较低™åºåº”甉|µä¸‹æŒ¥å‘性阈å€?/span>RSç‰ÒŽ(gu¨©)€§æ›²¾UÑ€?/span>

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论文具体信æ¯å¦‚下

emristor Based on Inorganic and Organic Two-Dimensional Materials: Mechanisms, Performance, and Synaptic Applications

ACS Applied Materials & Interfaces 2021 13 (28), 32606-32623

DOI: 10.1021/acsami.1c07665

相关链接

https://doi.org/10.1021/acsami.1c07665

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