您所在的位置：首頁(yè) > 科學(xué)研究 > 學(xué)術(shù)論文 > Abnormal current– voltage characteristics and metal– insulator transition of amorphous Fe-doped carbon films on Si substrates
Abnormal current– voltage characteristics and metal– insulator transition of amorphous Fe-doped carbon films on Si substrates
Abnormal current– voltage characteristics and metal– insulator transition of amorphous Fe-doped carbon films on Si substrates
Amorphous Fe0.05–C0.95 films have been deposited on n-type Si substrates using direct current magnetron sputtering. The structure and electrical properties of the films/Si are investigated. The film/Si deposited at room temperature exhibits abnormal current–voltage (I–V) characteristics, whose current
increases slowly at first, and then increases to a very large value when the voltage reaches a threshold. However, the I–V curves of the film on Si substrate deposited at 200 1C are almost linear. In addition, the
temperature dependence of the resistance of the film/Si shows a metal–insulator transition and the transition temperature can be hugely modulated by increasing the external bias voltage. Finally, we propose a possible model to interpret the abnormal electrical properties of the film/Si.
